Nano-Passivation of GaSb/InAs Strained Layer Superlattices Infrared Detector

Period of Performance: 02/17/2009 - 11/01/2010

$120K

Phase 1 SBIR

Recipient Firm

B & W Tek, Inc.
#19 Shea WaySuite 301
Newark, DE 19713
Principal Investigator

Abstract

Mid-infrared (MWIR, wavelength ~10 micron) imaging has significant importance in military surveillance and target recognition, since human body radiation peaks in MWIR. The GaSb/InAs type-II Strained Layer Superlattice (SLS) MWIR detector has been under intensive investigation recently. While much progress has been made to enhance wavelength coverage, one of the few remaining issues has been its relatively high surface leakage current and its associated noises. With a proven nano-material, we propose the nano-passivation of GaSb/InAs SLS and photodetector. The proposed solid-state nano-passivation technology will be completely compatible with array integration. The resulting focal plane array (FPA) will have minimized surface dark current, 15 micron or smaller pixel pitch, and 90% fill factor for high quantum efficiency. The nano-passivation layer will also have high device lifetime. In Phase I we will prove the feasibility of nano-passivation to minimize pixel dark current. In Phase II we will develop and prototype a complete FPA based on GaSb/InAs SLS, which will be delivered to DoD Labs for evaluation and demonstration. During Phase III, we will manufacture and market the proposed camera to defense contractors for incorporation into military systems and for our own infrared spectroscopy products.