Advanced Nitride Heterostructures for X-Band GaN HEMTs

Period of Performance: 03/27/2009 - 09/27/2009

$99.9K

Phase 1 SBIR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Principal Investigator

Abstract

Kyma Technologies together with the subcontractor at Virginia Commonwealth University, aim to develop high-performance AlInN/GaN based high electron mobility transistor (HEMT), operating in the X-band frequency region. We intent to employ a novel technical approach, which examines both large-scale semi-insulating GaN templates and high-quality semi-insulating native GaN substrates; benefits from optimization of device design by introducing additional spacer(s) and employs strain-compensation heterostructure engineering to enable the development ultra-high device performance. Phase I focuses on growth development of high-quality pseudomorphic AlInN/GaN strain-free heterostructures and detailed evaluation of material properties and lays the foundation for Phase II wherein ultra-high performance X-band HEMTs will be developed.