Advanced Nitride Heterostructures for X-Band GaN HEMTs

Period of Performance: 03/27/2009 - 09/27/2009


Phase 1 SBIR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Principal Investigator


Kyma Technologies together with the subcontractor at Virginia Commonwealth University, aim to develop high-performance AlInN/GaN based high electron mobility transistor (HEMT), operating in the X-band frequency region. We intent to employ a novel technical approach, which examines both large-scale semi-insulating GaN templates and high-quality semi-insulating native GaN substrates; benefits from optimization of device design by introducing additional spacer(s) and employs strain-compensation heterostructure engineering to enable the development ultra-high device performance. Phase I focuses on growth development of high-quality pseudomorphic AlInN/GaN strain-free heterostructures and detailed evaluation of material properties and lays the foundation for Phase II wherein ultra-high performance X-band HEMTs will be developed.