GaN-based Schottky Diodes for Power Converters in X-band Radar Power Supplies

Period of Performance: 03/27/2009 - 09/27/2009


Phase 1 SBIR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Principal Investigator


Kyma Technologies proposes to develop high performance GaN-based Schottky barrier diodes (SBDs) using high quality native GaN substrates. The inherent properties of the native substrate and the high quality epitaxy will enable novel technology advances beyond the current GaN SBD state of the art, and these devices will benefit power converters in X-band radar power supplies through fast, low-loss switching capabilities. Kyma will leverage existing partnerships with highly experienced research teams at North Carolina State University and Auburn University for device epitaxy and processing, respectively.