Built-In Filament Control for Long Lifetime in Broad Area Diode Lasers

Period of Performance: 08/08/2008 - 10/26/2010


Phase 2 STTR

Recipient Firm

Nlight Photonics
5408 NE 88th Street, Building E
Vancouver, WA 98665
Principal Investigator
Firm POC

Research Institution

University of Illinois, Urbana-Champaign
600 S Mathews
Urbana, IL 61801
Institution POC


In this Phase 2 program, nLight intends to demonstrate high-reliability / high-efficiency 808-nm broad area diode lasers. The root-cause of the failure modes of diode lasers investigated under Phase 1 will be addressed in this program. Collaborative work on built-in filament control by etching holes will continue in this program. Prototype designs first demonstrated by focused ion beam processing (a known reliability hazard) at UIUC will be optimized and fabricated using wafer-scale processing techniques which are amenable to high-reliability operation. The primary technical objective of this program is the demonstration of a high-efficiency (>65%) laser diode bar operating at 808-nm rated at 200 W with a > 15,000-hr operation lifetime (MTTF), qualified with a high degree of statistical confidence.