Insertion of an L-band SiC Static Induction Transistor into Missile Defense Radars

Period of Performance: 01/09/2003 - 07/09/2003


Phase 1 SBIR

Recipient Firm

Semisouth Laboratories
201 Research Blvd.
Starkville, MS 39759
Principal Investigator


The goal of this proposal is to lay the ground work for the insertion of SiC static induction transistors (SIT) in missle defense radars. The insertion of SiC SIT's would increase system reliability and power while lowering repair/logistics costs of these critical systems, therefore paying back the cost of development. Phase two of this effort if funded, would supply sample quantities of devices to the system contractor for adaptation and design prototyping, while phase three would carry out the actual quantity manufacturing and system insertion. SemiSouth Laboratories has patent pending technology developed for new device structures and processes needed for high-performance SiC discrete devices. From phase one into phase two, specific device parameter issues relating to an optimized device insertion will be addressed. Fabrication/processing issues to be examined include economical and high-performance SiC epitaxy growth, 75 mm wafer processing, in-situ process metrology for some self-aligned steps, and statistical process control for key unit process steps. These potential improvements will be analyzed from a manufacturing standpoint, and plans will be developed to improve the most important steps to ready the device for pilot production and system insertion in Phases II and III. Potential commercial applications of this technology include high-voltage oscillators for compact lighting ballasts, cellular phone base station transmitters, and high definition television broadcast transmitters. General anticipated benefits are also derived from increasing the industrial base of SiC discrete device and epitaxy suppliers, which will provide market infrastructure to help support DoD and commercial system insertion.