Resonant Tunnelling Diode for High-Power Room-Temp

Period of Performance: 09/09/2008 - 09/09/2009


Phase 2 STTR

Recipient Firm

Spire Corp.
One Patriots Park
Bedford, MA 01730
Principal Investigator
Firm POC

Research Institution

University of Virginia
351 McCormick Rd ECE Dept., Thornton Hall
Charlottesville, VA 22904
Institution POC


The objective of this STTR program is to model, design, build and demonstrate a novel, hybrid solid-state, interband resonant tunneling diode (I-RTD) oscillator capable of operating across broad portions of terahertz frequency band (300 600 GHz) at room temperature, with estimated terahertz output power levels in the 3 10 mW range. Such record terahertz oscillator performance will be of great use in military relevant applications such as chemical and biological agent detection, standoff imaging of concealed weapons and explosives, high-speed data processing and communications, and characterization of bio-molecular based devices and systems. Phase I of this program succeeded in modeling the I-RTD device, and generating candidate device structures based on the InGaAs/GaSbAs/InP compound semiconductor system, which can be synthesized in conventional epitaxial layer deposition systems, and then processed into devices. Phase II will grow epitaxial wafers of these material structures, process them into devices in Spire s semiconductor foundry, and test the devices for terahertz emission spectra, output power vs. drive conditions, and device operating temperature limitations. Phase II will also continue and extend device structure modeling and carry out electrical modeling of the I-RTD devices and their associated circuits.