High-Performance Type II Superlattice LWIR Detector on Six Inch (6”) Si

Period of Performance: 09/25/2008 - 01/26/2011

$773K

Phase 2 SBIR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator

Abstract

SVT Associates proposes an innovative 24-month Phase II program to further develop high performance Type-II superlattice focal plane arrays on Silicon substrates up to 6-inches in diameter. The Type-II superlattice material system is capable of infrared detection from 2 to > 30 micron, depending on layer composition and thickness. Photodetector arrays using this material are of great interest to the DoD for various applications including, in particular, optical detection and tracking of missiles. Silicon is desired for its robust structure and large area, which could yield dies with lower unit costs. Silicon also offers integration with readout circuitry and MEMs technology. In the Phase I record high quality GaSb on Si was grown, using proprietary buffer techniques, with x-ray FWHM values comparable to that of bulk GaSb. Test Type-II superlattice layers grown on GaSb/Si showed equally impressive data. The Phase II program will refine the buffer technology and fabricate LWIR photodetectors on Si.