GaN FETs for Class D PAs and broadband MMICs

Period of Performance: 05/14/2008 - 05/14/2010


Phase 2 SBIR

Recipient Firm

Nitronex Corp.
2305 Presidential Drive
Durham, NC 27703
Principal Investigator


The objective of the Phase II SBIR is to develop our GaN FET technology and satisfy the needs of NAVAIR communications systems. Specifically, we will be developing GaN FET technology that is suitable for Class D operation at frequencies up to 2GHz. We will achieve the program objectives by developing high frequency capable GaN FETs to support the switching speeds needed for the Class D PA. We will also develop broadband high power GaN MMICs with power and efficiency across 225-3200MHz frequency bands. This phase II will benefit JTRS 2MHz-2GHz radio program and also the F/A-18 Hornet avionics needs.