Materials for Terahertz Detectors

Period of Performance: 01/07/2008 - 01/07/2009


Phase 1 SBIR

Recipient Firm

Virginia Diodes, Inc.
979 Second Street, Southeast
Charlottesville, VA 22902
Principal Investigator


VDI s goal is to use new materials and processing techniques to achieve low barrier diodes that can be used as very sensitive zero-bias detectors and frequency mixers with extremely low local oscillator power requirements. The basic device goals, in terms of the materials study, are to achieve a controlled Schottky barrier height and reduced 1/f noise. The reduced barrier height will be controlled through the optimization of the alloy content of the semiconductor and the use of novel doping profiles. Advanced materials processing techniques will be used to reduce the 1/f noise. Through the successful conclusion of this effort VDI will achieve reductions in both the low-signal NEP and 1/f noise of state-of-the-art terahertz detectors and a fundamental reduction in the size and complexity of terahertz heterodyne receivers through the minimization of the LO power requirement.