Integrated wide-bandgap semiconductor photoconductive switch with a terahertz antenna

Period of Performance: 01/18/2008 - 01/20/2009


Phase 1 SBIR

Recipient Firm

Digital Fusion
5030 Bradford DriveBuilding 1, Suite 210
Huntsville, AL 35805
Principal Investigator


Current and future applications of terahertz technology are demanding higher and higher powers to perform analysis. Wide band spectroscopy applications, in particular, could benefit greatly from the creating high power laser-induced semiconductor switches (LSS). To this end we have identified five materials for further development as high power, wide bandgap LSS materials. Emphasis was placed on materials with high breakdown voltage, good thermal conductivity, and fast carrier recombination times. These materials will be analyzed with respect to structural, electrical, and optical properties to maximize their potential use as semiconductor switches.