High Voltage High Frequency SiC Switch

Period of Performance: 07/11/2008 - 05/11/2009


Phase 1 SBIR

Recipient Firm

Genesic Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Principal Investigator


The stringent power quality, size, weight and volume specifications for operating high power hardware in more-electric warships require the development of >100 kHz, 2 kV Silicon Carbide based power devices. GeneSiC proposes the development of a single chip power subcircuit using a unique and innovative Silicon Carbide SuperJFET technology. Apart from better circuit integration this approach offers more than an order to magnitude higher switching frequency, 2X higher current density, higher chip yield and highly reliability as compared SiC power MOSFETs. The reduction of interconnect parasitics and passives dramatically improves the temperature, radiation and power density metrics. The first challenging task of this program is the analytical, epitaxial and cell layout designs of these high risk/high reward concepts. Next, a novel SiC fabrication process sequence will be implemented in a commercial SiC foundry. The economical production of these devices allows a large number of these basic building blocks to be produced. A MIL-STD device test plan and circuit performance routine will be implemented. A comprehensive cost model will be developed for commercial feasibility. The initial demonstration of design and analysis of 2 kV power circuit is targeted, to enable MW-class power devices in Phase II and beyond.