Longwave Infrared Semiconductor Lasers

Period of Performance: 12/13/2004 - 06/13/2005

$70K

Phase 1 SBIR

Recipient Firm

Trion Technology
1025 South 52nd Street
Tempe, AZ 85281
Principal Investigator

Abstract

This program focuses on the development of novel high-temperature and high-power longwave infrared (LWIR) quantum cascade lasers operating in the 8 to 12 µm window, for military countermeasures, chemical and biological sensing, remote atmospheric sensing and imaging, noninvasive inspection of semiconductor wafers, and secure free-space communications. Such devices can be compact and enabling. The objectives proposed for Phase I and Phase I Option are the theoretical simulation and design of the device structure including injection efficiency and active region design, the growth of test samples to study and regulate the emission wavelength, and the fabrication of in-plane lasers to demonstrate the feasibility of the proposed sources. We will also implement newly developed MBE growth technology that improves the performance and yield of quantum cascade lasers.