GaN Single Crystal Growth in Gel

Period of Performance: 12/02/1998 - 06/03/1999

$68K

Phase 1 STTR

Recipient Firm

Lasergenics Corp.
6830 Via Del Oro, Suite 103
San Jose, CA 95119
Principal Investigator

Research Institution

Pennsylvania State University
110 Technology Center Building
University Park, PA 16802
Institution POC

Research Topics

Abstract

Recently a great deal of work has been directed at the growth of epitaxial layers of the group III nitrides because of their potential application in the manufacture of blue LEDs and laser diodes. These layers have been deposited on such materials as sapphire and silicon carbide. Because of the large lattice mismatch of these materials with the nitrides, a large number of defects are generated. If large single crystals of the group III nitrides could be grown, they could be used as bulk devices or substrates for thin film based devices, resulting in a significant improvement in efficiency. The objective of our proposal is to use our new growth technique, the growth of single crystals of GaN in a gel, to grow large crystals of GaN. This technique can also be used for the other group III nitrides, such as AIN and InN as well as for other materials that are difficult to grow.