Laser Writing of Quantum Crystal Structures

Period of Performance: 04/01/1996 - 04/01/1997

$79.2K

Phase 1 STTR

Recipient Firm

Structured Materials Industries
201 Circle Drive North Unit # 102
Piscataway, NJ 08854
Principal Investigator
Firm POC

Research Institution

Massachusetts Institute of Technology
77 Massachusetts ave
Cambridge, MA 02139
Institution POC

Research Topics

Abstract

The demonstration of photoluminescent (PL) and electroluminescent (EL) from nanometer scale Si and Ge crystals has been regarded as an important step toward the realization of Si-based photonic and optoelectronic devices. From the material aspect, the successful development of such devices relies heavily on the ability to control the formation of the nanocrystals in size and distribution since quantum effects play the major role in the observed PL and EL phenomena. The device processing, structure, and packaging are also important features. Structured Materials Industries, Inc. (SMI), developed a technology to fabricate Si/Ge nanocrystals in an amorphous SiOx matrix and demonstrated a white-light EL device from this material. SMI will team with MIT Lincoln Laboratory to implement a laser beam processing technology to control the formation of Si nanocrystals in the amorphous SiOx matrix. The laser technology has been developed by MIT Lincoln Laboratory and successfully applied to produce device quality polysilicon. The goal of implementing the MIT Lincoln Laboratory laser annealing approach is to facilitate multicolor pixel arrays from a single composition film, thus, maximizing the "color" output efficiency per pixel and minimizing cost through eliminating multilayer processes. This program will build upon SMI's current nanotechnology success and add in the advanced processing technology from MIT Lincoln Laboratory that will be needed for advanced device manufacturing. It will facilitate the development of nanocrystal-based photonic devices.