High Thermal Conductivity AIN Packages for High Temperature Electronics

Period of Performance: 09/22/1994 - 08/25/1995


Phase 1 STTR

Recipient Firm

Quest Integrated, Inc.
19823 58th Place S
Kent, WA 98032
Firm POC
Principal Investigator

Research Institution

University of Washington
Department of Aeronautics&Astronautics, Box 352250
Seattle, WA 98195
Institution POC

Research Topics


This program will develop a high-thermal-conductivity (TC = 170 W/m-K), AlN ceramic packaging for SiC integrated circuits in high-temperature applications. The chemical compatibility of candidate interconnect materials with AlN and SiC will be determined by diffusion couple studies. The blocks of candidate interconnect materials will be prepared by hot pressing. The surfaces will be polished and machanically coupled with surfaces of polished AlN substrates for diffusion couple studies. Selected materials will be deposited on AlN and SiC sample using CVD techniques for thermomechanical compatibility studies. The interfaces will be characterized before and after temperature excursions to determine the thermomechanical capatibility between AlN, SiC, and the interconnect materials.