Doped Nanocrystals - Novel Quantum Dot Materials for Ultrafast Mesoscale Optical Devices

Period of Performance: 01/13/1995 - 07/13/1995

$99.5K

Phase 1 STTR

Recipient Firm

Nanocrystals Technology Limited Partners
P.O. Box 820
Briarcliff Manor, NY 10510
Principal Investigator

Research Institution

University of Michigan
3003 South State Street
Ann Arbor, MI 48109
Institution POC

Research Topics

Abstract

Quantum confinement leads to modification of optical properties, in particular, the energy band gap of the semiconductor increases as the size of the quantum dot decreases. So far these zero-dimensional quantum dots have not found any applications unlike two-dimensional quantum wells, because the luminescent emission in these quantum dots at room temperature is rather poor. Recent breakthroughs by Nanocrystals Technology which incorporated an impurity in a quantum dot has resulted in ultrafast and efficient phosphors form 35A ZnS doped with Mn. We propose to extend this work and develop nanocrystals of Y2O3 and ZnS with rate-earth dopants. We will study the transfer rates in doped nanocrystals in picosecond to femtosecond range. By performing the band gap engineering, we could achieve simultaneous enhancement of spatial overlap and energy transfer in doped nanocrystals. This could result in ultrafast capture rates and subsequent high luminescence efficiency in phosphors. These phosphors then will be developed for many applications which include imaging lasers, displays and sensors.