Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

Period of Performance: 06/29/1999 - 12/29/1999

$65K

Phase 1 STTR

Recipient Firm

NZ Applied Technologies Corp.
14A Gill Street
Woburn, MA 01801
Principal Investigator
Firm POC

Research Institution

University of Illinois, Urbana-Champaign
600 S Mathews
Urbana, IL 61801
Institution POC

Abstract

In this Phase I we propose to demonstrate an advanced Heterojunction Bipolar Transistor based on III-nitride heterostructures. There is a strong need for high power HBTs for highly linear, microwave high power amplifiers. The innovation of this proposal is to utilize a high p-type lateral conductivity in III-nitride based superlattice structure in order to reduce the p-base access resistively. The viability of the concept will be demonstrated during Phase I effort. University of Illinois has developed unique fabrication technology of the ohmic contacts for p-GaN. This technology along with RIE process for WBG materials will be applied for the fabrication of the proposed HBT devices.