SiC Epitaxial Growth by Halo-hydrocarbon Precursor Growth

Period of Performance: 07/01/2004 - 04/30/2005

$96.4K

Phase 1 STTR

Recipient Firm

Widetronix
Langmuir Laboratory 95 Brown Road - Box 1039
Ithaca, NY 14850
Principal Investigator
Firm POC

Research Institution

Cornell University
426 Phillips Hall
Ithaca, NY 14853
Institution POC

Abstract

We propose to demonstrate the feasibility of high quality SiC epitaxial layer growth using low-temperature (1000 oC) Chemical Vapor Deposition (CVD) from chlorine containing carbon precursors. In this effort, we will focus on determining the optimal growth conditions, and select the most promising halogenated hydrocarbon precursors from available precursors such as CH3Cl, CH2Cl2, CHCl3, CCl4, etc. By using a halo-carbon precursor, and simultaneously optimizing the temperature gradients in the growth chamber, we will be able to achieve about 500 oC reduction in the growth temperature of SiC grown on SiC substrates. Growth rate and material quality will be demonstrated at Cornell University in a commercially manufactured rotating disk reactor. Widetronix is partnering with Veeco Corporation (formerly EMCORE) in this effort to develop turbo disk reactor technology and processes for SiC applications. Utilizing this improved technology and processes Widetronix will supply epitaxial device structures for power and optoelectronic applications.