Low-Noise Avalanche Photodiodes for Mid-IR Applications

Period of Performance: 09/30/2004 - 06/30/2005

$99.8K

Phase 1 STTR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator
Firm POC

Research Institution

Columbia University
615 West 131st Street
New York, NY 10027
Institution POC

Research Topics

Abstract

Avalanche photodiodes (APDs) are the detector of choice for low noise, high speed, high sensitivity photodetectors. Applications in the mid-IR (3-5 micron) include optical trace gas detection, LADAR, quantum cryptography and targeting countermeasures. Currently there are no commercially available APDs operating in this wavelength range. To address this need, this Phase I program will investigate using the III-V ternary alloy InAsSb for APD applications. This compound semiconductor alloy has a low bandgap energy suitable for absorbing mid-IR photons. The InAsSb material will be combined with a p-i-n avalanche multiplication structure in a unique manner to create a low noise 3-5 micron wavelength APDs.