High Power Vacuum GaN

Period of Performance: 09/14/2004 - 03/13/2005

$98.5K

Phase 1 STTR

Recipient Firm

Stellar Micro Devices
2020 Centimeter Circle
Austin, TX 78758
Firm POC
Principal Investigator

Research Institution

Massachusetts Institute of Technology
77 Massachusetts ave
Cambridge, MA 02139
Institution POC

Abstract

High power GaN devices are proposed in which vacuum gaps increase anode voltage and power. Anode placement will be optimized for device performance and power dissipation.