A Novel High-Sensitivity High-Temperature Transistor Infrared Sensor

Period of Performance: 03/15/2005 - 09/15/2005

$150K

Phase 1 SBIR

Recipient Firm

Qmagiq, LLC
22 Cotton Road Array
Nashua, NH 03063
Principal Investigator

Abstract

We propose a novel infrared focal plane array (IRFPA) based on quantum dots in the channel of a gated high-electron-mobility-transistor (HEMT). This 3-terminal device, that we call a QHEMT, will exploit a lateral (source to drain) photocurrent generated by intersubband absorption of infrared photons in InGaAs quantum dots in the channel. The gate will be used to minimize dark current and maximize signal to noise ratio. Peak EXTERNAL quantum efficiencies greater than 50% and high operating temperature (appproaching room temperature) are expected because of the 3-dimensional quantization of energy states in the dots. A 320x256 array of QHEMT pixels will be designed and fabricated in such a way as to allow hybridization to an off-the-shelf Read Out Integrated Circuit (ROIC). In Phase 1, we will design, grow, and fabricate a QHEMT array, hybridize it to a FANOUT, and perform complete radiometric, optical, and electrical testing to assess the viability of this device concept.