Infrared materials modeling for next generation focal plane architectures

Period of Performance: 08/01/2003 - 01/31/2004

$69.9K

Phase 1 STTR

Recipient Firm

Avyd Devices, Inc.
2925 COLLEGE AVENUE, UNIT A-1
Costa Mesa, CA 92626
Principal Investigator

Research Institution

SRI International
333 Ravenswood Avenue Mail stop: 306-17
Menlo Park, CA 94025
Institution POC

Abstract

In Phase I, AVYD DEVICES in collaboration with SRI International, will demonstrate the feasibility of our modeling approach to predict material properties and device performances using experimental parameters of growth and fabrication processes for multicolor HgCdTe detectors. The models will include point defect-dopant interactions; Fermi dopant diffusion; interdiffusion (including Fermi level effects); interactions between dopants, point defects, and extended defects; defect injection and formation during etching; and deposition of passivation layers. The models will be calibrated against experimental data. Multicolor IR sensors, weather science, metrology, industrial process monitoroing and surveillance