Infrared Materials Modeling for Next Generation Focal Plane Architectures

Period of Performance: 07/25/2003 - 01/25/2004

$69.7K

Phase 1 STTR

Recipient Firm

Aet, Inc.
1900 S. Harbor City Blvd. Suite 236
Melbourne, FL 32901
Principal Investigator

Research Institution

Florida Institute of Technology
150 West University Boulevard
Melbourne, FL 32901
Institution POC

Abstract

This proposal is a response to the request by the United States Missile Defense Agency for Infrared Materials Modeling for Next Generation Focal Plane Architectures. We will create an improved model for infrared (IR) material growth structures used in HgCdTe IR focal plane arrays. Models should address the material processes needed for fabrication of multi-layer structures covering a wide range of wavelengths, middle wavelength to very long wavelength (MW to VLWIR). The results of the investigation should identify how the model will address/identify critical steps in the processing and final structure of the various architectures. The following tasks will be performed: · Investigation of Current Models/Simulators · Adapting Current Models/Simulators for New Objective · Development a New Model and User Friendly Simulator · Integration with and existing AET, Inc. simulator called IR-SIM This proposal directly addresses all of the main tasks identified by the Missile Defense Agency in the STTR solicitation. AET proposes to team with researchers at Florida Institute of Technology (Florida Tech) to jointly do the literature search and perform the model development. Between AET and Florida Tech there exists all of the knowledge necessary to address each of the items identified as deliverables for this project. The primary benefit of the AET Infrared Materials Modeling program will be to provide the US government and commercial FPA vendors the capabilities to employ advanced detector technologies. AET will also integrate the material models with existing device design tools that will increase the performance and affordability of Multi-color FPA's.