Radiation and temperature-tolerant SiC JFET technologies for Space-Based Systems

Period of Performance: 08/30/2002 - 03/25/2003

$70K

Phase 1 STTR

Recipient Firm

Semisouth Laboratories
201 Research Blvd.
Starkville, MS 39759
Principal Investigator
Firm POC

Research Institution

Mississippi State University
133 Etheridge Hall, 449 Hardy Road
Mississippi State, MS 39762
Institution POC

Research Topics

Abstract

SiC JFET technology for control IC's in space based systems enable the possibility of temperature-tolerant, rugged, radiation-hard circuit operation. Additionally, it offers the possibility of combining with SiC power devices, a high level of integration, reduced parts count, reduced cost and weight in satellite systems. SemiSouth Laboratories, Inc. plans to transfer critical JFET IC technology developed at Mississippi State University to prototype status, and work with key DoD customers to provide early adaptation of the technology. Will further SiC I.C. development, especially in integrated control electronics which are needed for high-temperature sensors and power modulators under distributed control.