TeraHertz High-Reliability InP DHBT Technology for Millimeter-Wave Amplifiers and Ultra-High Speed Digital ICs

Period of Performance: 08/22/2001 - 02/11/2002


Phase 1 STTR

Recipient Firm

RJM Semiconductor, LLC
10 Summit Ave., Building 3
Berkeley Heights, NJ 07922
Principal Investigator

Research Institution

Jet Propulsion Laboratory
4800 Oak Grove Drive
La Cañada Flintridge, CA 91011
Institution POC


RJM Semiconductor and NASA JPL propose to demonstrate the world's fastest InP transistor technology with cut-off frequencies approaching 1TeraHertz combined with the essential device reliability required for real systems deployment. The approach will adopt a new patent-pending Self-Aligned HBT Process invented at RJM Semiconductor that employs stable, non-diffusing Carbon-doped bases, high breakdown voltage InP collectors, and Si3N4 dielectric emitter p-n junction passivation to achieve excellent device reliability. A transferred substrate process will be used to reduce the extrinsic collector capacitance thus maximizing the HBT cut-off frequency. The Phase I tasks include (1) MBE growth of InP C-doped base DHBT structures, (2) Process development and fabrication of submicron emitter stripe DHBT devices, and (3) On-wafer RF measurements and equivalent circuit modeling. The goal of the Phase II proposal would be to demonstrate millimeter-wave (200-300GHz) oscillators/amplifiers using this InP DHBT IC technology.This newly developed ultra-high frequency InP DHBT technology is expected to reduce the size, weight, and cost of millimeter-wave oscillators, amplifiers, and receivers for satellite, missile, and avionics systems. This new IC technology could potentially improve the performance of systems by providing devices with frequency of operation beyond the current state-of-the-art. These ultra-high frequency InP DHBT ICs coudl be used in millimeter-wave imaging and target acquisition RADAR systems, in military Ultra-Wideband secure communications links, in ultra-high speed Analog-to-Digital Converters (ADCs), and for spectroscopic sensing of the earth's atmosphere and in space science. In addition this InP DHBT IC technology could be enabling for commercial applications including future generations of high speed communications systems including 40Gbit/sec and higher bit rate fiber-optic systems, millimeter-wave links for LMDS base stations, and in automotive collision-avoidance RADAR. The projected systems markets for this InP DHBT IC technology exceeds $300Billion over the next decade.