Homoepitaxial GaN-based Devices for RF Electronics

Period of Performance: 06/08/2007 - 03/31/2008


Phase 1 SBIR

Recipient Firm

Kyma Technologies, Inc.
8829 Midway West Road Array
Raleigh, NC 27617
Principal Investigator


In this Phase I proposal, Kyma Technologies will examine the epi properties and device performance of homoepitaxial GaN-based device layers grown on semi-insulating GaN substrates, targeting metrics that will help characterize performance at high frequency and correlating device performance with material properties. High frequency GaN devices will theoretically benefit from a lower dislocation density through improved thermal performance and improved dispersion performance. Device performance improvements will target high efficiency and bandwidth at high frequency, and the Phase I effort will assess the feasibility of the approach by measuring initial device performance and showing trends for high frequency device performance.