Digital Signal Processing Circuit with Embedded Reprogrammable Nonvolatile Memory

Period of Performance: 04/21/1999 - 04/10/2000

$100K

Phase 1 SBIR

Recipient Firm

Nonvolatile Electronics, Inc.
11409 Valley View Road Array
Eden Prairie, MN 55344
Principal Investigator

Research Topics

Abstract

An embedded reprogrammable nonvolatile memory will be developed and integrated with a high performance digital signal processor (DSP) to allow reprogramming in the field which is currently not possible. New opportunities will become available with this development to reprogram DSPs in satellites and other remote locations as new software and innovations evolve. Radiation hardness is important in these applications which is an inherent attribute of Magnetoresistance Random Access Memory (MRAM) along with a Silicon-On-Insulator (SOI) process which is available to NVE both through IMP and Honeywell. Existing nonvolatile memory technologies will be evaluated to determine the suitability to the needs of this program including a 32K x 8 MRAM chip currently being developed for Eglin AFB for integration into high shock data recorders. MRAM is well suited to these applications since it is high speed, has no wear out mechanisms, is nonvolatile, and is fully CMOS and SOI process compatible. A preliminary design for reprogrammable nonvolatile memory embedded DSP circuits along with a prototype fabrication process for production will be developed. The basic DSP and nonvolatile memory technology selected will be merged and demonstrated during this Phase I program.