Epitaxial Growth of Silicon Carbide (SiC)

Period of Performance: 06/25/1999 - 03/25/2000

$97.6K

Phase 1 SBIR

Recipient Firm

Emcore Corp.
394 Elizabeth Ave.
Somerset, NJ 08873
Principal Investigator

Research Topics

Abstract

Silicon Carbide (SiC) is an attractive material for use in high power and high temperature devices. We are proposing to develop novel growth systems and growth processes for the 2" wafer growth of SiC. Experiment and calculations performed have demonstrated that 250-300 degrees C is lost at each structural element (filament/susceptor, susceptor/wafer) located between the heater filament and SiC wafer in SiC reactors. These interfaces are responsible for high filament temperatures and, hence, low lifetimes,