Epitaxial Growth of Silicon Carbide (SiC)

$97.6K

Recipient Firm

Research Topics

• High Power Devices High Te

Abstract

Silicon Carbide (SiC) is an attractive material for use in high power and high temperature devices. We are proposing to develop novel growth systems and growth processes for the 2" wafer growth of SiC. Experiment and calculations performed have demonstrated that 250-300 degrees C is lost at each structural element (filament/susceptor, susceptor/wafer) located between the heater filament and SiC wafer in SiC reactors. These interfaces are responsible for high filament temperatures and, hence, low lifetimes,