A Novel Flux Growth Technology for Growing Aluminum Nitride Single Crystals

Period of Performance: 05/12/1999 - 11/12/1999

$69.9K

Phase 1 SBIR

Recipient Firm

Sienna Technologies, Inc.
19501 144th Avenue NE Array
Woodinville, WA 98072
Principal Investigator

Research Topics

Abstract

This project will investigate a novel method for growing single aluminum nitride crystals by a modified top seeded flux growth technique. A flux material will be selected to dissolve the aluminum and aluminum nitride powders. Solubility limit of aluminum nitride in potential flux materials will be determined. Flux material will form a temporary media between the molten metal and nitrogen atmosphere for precipitation of single crystal under a temperature gradient. Single crystals will be grown on a seed crystal rotating at the flux surface in nitrogen gas atmosphere. Crystal growth parameters will be studied to enhance the crystal quality and the growth rate.