Radiation Tolerant Microelectronics and Photonics Technology Development

Period of Performance: 05/12/1999 - 12/12/1999

$100K

Phase 1 SBIR

Recipient Firm

Spinnaker Semiconductor
Room 527 Shepherd Labs, 100 Union St. SE
Minneapolis, MN 55455
Principal Investigator

Abstract

Spinnaker Semiconductor will develop its proprietary Schottky barrier CMOS technology (SB-CMOS) for space and other radiation hard environments. SB-CMOS offers a dramatic reduction in parasitic bipolar gain and therefore unconditional immunity to latch-up. It also has greatly increased hardness to node-discharge and other single-event-effects. The proposed SB-CMOS technology features MOS devices with minimum channel lengths of 50 nm and will therefore be ideal for high-speed digital and mixed-signal applications. Anticipated Benefits: 1) Unconditional immunity to latch-up 2) Greatly increased tolerance to node-discharge and other single event effects 3) 50 nm minimum channel length devices for high unity gain frequency 4) Silicon based, planar technology.