Quasi-Self-Assembled Si-Based Light Emitter for Optical Computing

Period of Performance: 05/13/1999 - 11/12/1999


Phase 1 SBIR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator


Advances in optical computing and signal processing would benefit from the breakthroughs in materials technology for monolithic optoelectronics integration. We propose a new silicon-based light emitter for such possible "superchip-IC". This concept is an extension of a major material development recently demonstrated called hetero-epilattice Si/O superlattice (HES), which for the first time created robust silicon, potentially very fast based light emitters. An initial version has been in continuous operation without degradation for over one year. Made by a quasi-self-assembly process, it is compatible with the standard silicon processing so the device can be readily integrated into electronic circuits. We plan to investigate alternative material and process optimization to improve the interface quality such that the efficiency of the device could be significantly enhanced. The proposed work includes material fabrication, comprehensive characterization and device testing. This feasibility study would then lead to the Phase II demonstration of monolithic integration of photonic and electronic devices.