Novel High-power Nitride-based Electronic Devices for Wireless Communication

Period of Performance: 07/21/1999 - 01/20/2000

$64.9K

Phase 1 SBIR

Recipient Firm

NZ Applied Technologies Corp.
14A Gill Street
Woburn, MA 01801
Principal Investigator

Abstract

Innovative device designs based on application of novel wide band gap nitride efficient electron emitters for significant improvement of microwave power characteristics of Heterostructure Bipolar Transistors (HBTs) will be developed. NZ Applied Technologies has recently developed novel nearly lattice matched (or strained) and chemically compatible semiconductor heterostructure systems comprising complex ternary and quaternary nitrides and SiC. These heterostructures should have virtually dislocation free interfaces, and could add to SiC homostructure electron devices all the advantages of heterostucture technology. Negligible hole injection from the SiC base to the WBG emitter is ensured by larger then 1eV band offsets, providing greater gain and wider bandwidth. One unique property of these novel WBG lattice matched semiconductor emitters, is high electron conductance, even at band gaps above 4.2 eV. Electron conductivity can be controllably varyed by controlling parameters during epitaxial growth. The proposed novel HBT device offers superior performance compared to the power devices based on (Al)GaN/SiC heterojunction and SiC homojuctions. The goal of this Phase I effort is, therefore, to demonstrate an HBT, based on the proposed novel heterostructures