Indium Gallium Arsenide Antimonide Quantum Dot Infrared Detectors

Period of Performance: 05/28/1999 - 11/27/1999


Phase 1 SBIR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator


This proposal addresses the need for better performance in IR detectors operating in the 2-10 micron range. SVT Associates proposes to investigate the application of Indium Gallium Arsenide Antimonide quantum dots (QD) to detectors and imaging arrays operating in this regime. The material structures will be grown using molecular beam epitaxy (MBE). Quantum confinement offers physical and electrical properties which are potentially advantageous to devices such as detectors. In Phase I, the QD alloy and growth conditions will be explored and characterized, and a prototype QD will be fabricated. In Phase II, detector performance will be refined and imaging arrays will be created based on these QD detectors.