Gallium Indium Antimonide - Indium Arsenide Superlattices for Long Wavelength Infrared Detection

Period of Performance: 04/28/1999 - 01/28/2000

$99.3K

Phase 1 SBIR

Recipient Firm

SVT Assoc., Inc.
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator

Abstract

GaInSb/InAs superlattices show great promise as materials for use in very long wavelength infrared detectors (VLWIR). This III-V compound offers advantages over current HgCdTe technology in both anticipated performance level and ancillary support systems (cryogenic cooling) costs. In this proposal, we seek to advance this superlattice material and its growth on (111)B oriented GaSb substrates using molecular beam epitaxy. Combining arsenic and antimony valved-crackers with desorption mass spectroscopic monitoring and control will yield superlattices with exceptional structural, optical, and electrical quality.