Nitride-Based Heterojunction Bipolar Transistors

Period of Performance: 06/07/1999 - 12/06/1999

$65K

Phase 1 SBIR

Recipient Firm

Blue Lotus Micro Devices
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator

Research Topics

Abstract

Proposed here is the development of AlGaN/GaN HBTs for linear, high temperature operation with very high power density needed to design >400 W output power amplifier modules in the 1-5 GHz frequency band. A successful program would result in a small form factor solid-state alternative to traveling wave tubes in this application regime. The GaN-based HBTs offer high transistor linearity inherent in bipolar designs that is required for economically significant digital transmission applications. The chemically stable, thermally stable, high temperature, high power devices would have numerous commercial applications in aerospace, automotive, portable communications and digital communications industries.