Nitride Semiconductors for High Power Microwave Electronics

Period of Performance: 03/31/1999 - 09/30/1999

$64.5K

Phase 1 SBIR

Recipient Firm

Blue Lotus Micro Devices
7620 Executive Drive
Eden Prairie, MN 55344
Principal Investigator

Abstract

This proposal addresses the need for high power microwave transistors. Blue Lotus Devices proposes to develop AIGaN/InGaN high electron mobility transistors (HEMT) structures for this application. In Phase I, the heterojunction will be deposited and the electrical and physical properties of the structure characterized. In Phase II, high frequency power HEMTs will be fabricated and tested. The anticipated increase in carrier confinement, sheet carrier concentration and electron mobility will lead to improved power and frequency characteristics of nitride based transistors