Integrated Solutions for Packaging of High Power Electronics

Period of Performance: 04/20/1999 - 12/20/1999

$98.9K

Phase 1 SBIR

Recipient Firm

K Technology Corp.
2000 West Cabot Blvd.Suite 150
Langhorne, PA 19047
Principal Investigator

Abstract

Operating temperatures of high-power solid-state electronics are of critical importance to the functionality and performance of these devices. Current solutions have reached functional limitations, therefore identifying the need for increased performance from thermal management materials and waste heat rejection systems. DARPA's Megawatt Solid-State Electronics Program is focused on efficient switches operating in power ranges between 100 kW to 1 MW. Fabrication procedures and packaging techniques are being developed to integrate high-voltage, high current switches with control electronics and sensors having compatible electrical characteristics. Packaging is critical because it must provide good thermal management over wide temperature ranges and in potentially harsh environments. To take full advantage of the superior properties of SiC compared to Si, these packages must operate up to roughly 300 C and dissipate power loss in the switches of many kW/cm2. k Technology Corporation (kTC) proposes to develop a high performance electronic package material with high conductivity (>1000W/mK), and low coefficient of thermal expansion (6.5 ppm/K). The performance and cost goals of this proposed program are possible through a unique application using encapsulated thermal pyrolytic graphite (TPG). The proposed material system can provide the required low resistance path for efficient cooling while satisfying mechanical and electrical requirements.