A SiGe Radar Proximity Sensor

Period of Performance: 12/18/1998 - 06/30/1999


Phase 1 SBIR

Recipient Firm

Q-dot, Inc.
1069 Elkton Drive
Colorado Springs, CO 80907
Principal Investigator


Q-DOT proposes to realize an inexpensive, low-power, single-chip radar proximity sensor in advanced silicon germanium tSiGe) BiCMOS technology. This technology combines state-of-the-art RF transistors (Ft=47 GHz) with millions of state-of-the-art (0.35 um) CMOS transistors, all at the low cost of silicon processing. Integration of this sophisticated sensor with a battery and antenna will provide high performance fusing for small caliber, medium caliber, and submunition application Q-DOT has extensive experience in developing MMIC technology with IBM's SiGe processes. We have designed and fabricated advanced, mixed analog/ digital circuits including ADCs, DACs, mixers, VCOs, LNAs, and related circuits for operations to 20 GHz. Our partner, Kaman Aerospace Corporation's Raymond Engineering Operations (REO) is a recognized leader in the development and manufacture of sating and arming devices for fuzing. During Phase I, several radar schemes will be assessed for performance and realization as a single SiGe BiCMOS chip. Under the Phase I Option, the most promising radar scheme will be functionally demonstrated with laboratory equipment. In Phase II, the complete, single-chip radar will be fabricated. Our development partner, REO, plans to develop a complete, single-chip radar proximity fuse in Phase III. BENEFITS: The small, inexpensive radar proximity sensor will find a place in commercial robotics for automation control, mating/docking, and collision avoidance; in advanced highway systems for dynamic vehicle positioning and air bag fusing; and in the manufacturing and assembly of large equipment for gross component location and positioning.