High-Power, Frequency-Stabilized Diode Laser for Raman Spectroscopy

Period of Performance: 04/08/1998 - 10/07/1998

$64.7K

Phase 1 SBIR

Recipient Firm

Process Instruments, Inc.
825 North, 300 West, Suite 225
Salt Lake City, UT 84103
Principal Investigator

Abstract

We propose to develop intermediate to high power (.1 to 4 W), frequency- stable diode lasers with high modulation capability and long life. Our approach can provide fixed-frequency radiation sources for 1 pace-based ballistic missile defense applications. To demonstrate the technology we will develop a compact, lightweight, relatively inexpensive, proprietary external-cavity-stabilized diode laser array with high power that can be used for Raman spectroscopy. Our approach offers a simple, reliable laser source with no moving parts for reduced maintenance and good stability and, most importantly, that is affordable for many military and industrial applications. Since our external-cavity technology can be used with any existing high power diode array, the technology offers a large wavelength selection. Research with lower power (