Advanced Short, Mid and Long Wavelength Infrared Detector Material

Period of Performance: 05/14/1998 - 02/14/1999

$100K

Phase 1 SBIR

Recipient Firm

Fermionics Corp.
4555 Runway St
Simi Valley, CA 93063
Principal Investigator

Research Topics

Abstract

The goal of this three phase program is to develop a technology to produce Shortwave Infrared (SWIR), Midwave Infrared (MWIR), and Longwave Infrared (LWIR) Mecury Cadmium Telluride (HgCdTe) materials and arrays for strategic applications. The major Phase I objective is to demonstrate a high yield technology for producing device quality HgCdTe Liquid Phase Epitaxy (LPE) layers. In order to achieve this objective, our appoach is to minimize the defects in both ZnCdTe substrates and HgCdTe layers. Linear and area SWIR, MWIR, and LWIR arrays will be fabricated to validate this technology. During Phase I of this program, we will complete the study of the effect of ZnCdTe substrate quality on the properties of LWIR layers and diodes, and will continue the process of minimizing defects in HgCdTe epilayers. Three inch ZnCdTe crystals will be grown, HgCdTe epilayers will be produced, and HGCdTe detector arrays will be fabricated. P-on-n, 128x128 LWIR arrays and n-on-p linear arrays will be manufactured to validate our state-of-the-art technology. The 128x128 arrays will be hybridized to readout multiplexers and be extensively tested. In Phase II, we will further refine the above processes and will establish a pilot production line to produce ZnCdTe/CdTe crystals, HgCdTe LPE layers, and HgCdTe SWIR, MWIR, and LWIR arrays. During Phase III, the new advanced products will be commercialized.