Development of an InP Based Integrated High Speed Photoreceiver

Period of Performance: 09/13/1994 - 03/13/1994

$59.6K

Phase 1 SBIR

Recipient Firm

Discovery Semiconductors, Inc.
Nj
Ewing, NJ 08628
Principal Investigator

Research Topics

Abstract

We propose to develop a novel technology for fabricating high speed integrated photoreceiver MMIC chips on the InP substrate. The in- novation consists of a new, unique, optically resonant, high speed InO.53GaO.47As photodetector that has a wavelength selective response. This resonant detector not only has improved quantum efficiency over conventional InGaAs high speed photodetectors, but also discriminates different wavelengths in a compact and solid state design. In addition, we will investigate different approaches for integrating high speed optical resonant detectors and MMIC amplifiers on the same InP substrate. The objective of this investigation is to determine the optimum selective epitaxy and selective etching schemes for integrating InP-based detectors and HEMT MMIC amplifiers. Our overall goal is to develop a technology for manufacturing integrated photoreceivers with frequency response up to 44 GHz. Dr. Leye Aina of the Microwave Signal, Inc. will consult.