Ultra-high Brightness Laser Diode Arrays for 10 W - 300 W Cw Applications

Period of Performance: 04/29/1994 - 01/19/1995

$78.6K

Phase 1 SBIR

Recipient Firm

Sdl, Inc.
80 Rose Orchard Way
San Jose, CA 95134
Principal Investigator

Research Topics

Abstract

SDL proposes to develop a new class of high power, ultra-high brightness semiconductor diode laser arrays based on a unique large-aperture single-mode laser. The new array architecture will increase the brightness available from high power semiconductor arrays by two orders of magnitude. The array is composed of elements each emitting single frequency, diffraction-limited output to 1 W cw from a single aperture. Brightness exceeding 10 MW/cm2Sr can be obtained from linear array modules using brightness-conserving microoptics and optical fibers. These compact modules can be combined into 10 W to 300 W cw systems, configured to maintain high brightness. This revolutionary laser array design is applicable to all semiconductor laser materials emitting from visible to mid-infrared wavelengths.