Epitaxial Growth of (in,ga,al)n Heterostructures for Electronics

Period of Performance: 09/16/1994 - 03/16/1995

$66.2K

Phase 1 SBIR

Recipient Firm

NZ Applied Technologies Corp.
14A Gill Street
Woburn, MA 01801
Principal Investigator

Abstract

Wide bandgap nitride materials are emerging from a long period during which device development has hindered by inadequate materials technology. This is particularly true in the case of wide bandgap compound semiconductor devices. Historically, it has been impossible to produce wide gap III/V or II/VI materials with significant p-type conductivity. Recently, however, blue lasers have been developed in the ZnS/ZnSe materials system which can operate in pulsed mode at 300 K. Two japanese groups have also succeeded in fabricating blue LED devices from GaN. One of the groups used a unique modification of MOCVD called 'two flow' method. In the same spirit, the proposed program seeks to apply and combine the unique features of several emerging CVD techniques to promote the growth of high quality (In,Ga,Al)N Heterostructures at low temperatures.