SiC Switch for Laser Power Modules

Period of Performance: 07/28/2006 - 07/28/2007


Phase 1 SBIR

Recipient Firm

Genesic Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
Principal Investigator


The development of high performance power module based on fast, ultra high voltage (UHV) SiC switch is proposed. A number of innovative power device structures are introduced here for the first time. Using a comprehensive set of evaluation metrics, these devices will be benchmarked against more conventional power MOSFETs and IGBTs for application in a power supply of a high power laser. To give a wide range of breakdown voltage/switching speed trade-offs, diverse device structures include those relying on Thyristor-type, Bipolar Junction Transistor-type as well as JFET-type characteristics will be explored. Novel methods to use the proposed devices in PWM pulse forming networks are proposed. Relevant SiC fabrication experiments will be conducted to adapt commercial foundry to fabricate high performance SiC UHV devices. Extensive test and reliability plan will be developed for evaluating devices for high voltage pulse forming as well as trigger circuits. Power modules will be designed to have low parasitic inductance, high voltage stand-off capability and low thermal impedance. Finally, the most appropriate device will be fabricated and packaged in a power module optimized for >300 kW laser power supply during the Phase II of the program.