Vertically Integrated Dual Color Infrared InAs/InGaAs SLS Detectors.

Period of Performance: 04/07/2006 - 04/09/2007

$99.8K

Phase 1 SBIR

Recipient Firm

Epitaxial Technologies, LLC
1450 South Roling Road
Baltimore, MD 21227
Principal Investigator

Abstract

For this Phase I SBIR project, Epitaxial Technologies proposes new tunable detectors that are designed to be spectral band limited and whose spectral window can be continuously varied with applied bias. Specifically, we will develop high sensitivity, monolithic reconfigurable two color SLS detectors and arrays having simultaneous response in the 12-16 and 16-20 mm spectral range. We will achieve simultaneously and continuously tunable devices by using an innovative combination of material growth and novel band gap engineered device design to vertically integrate a previously developed spectral band limited SLS detector structures for the two wavelength bands with tuning superlattice layers for continuous bandgap and wavelength shift using the stark effect. In the first phase of this program, we propose to simulate and investigate several InAs/GaInSb SLS structures, including vertically integrated devices and lateral MSM device structures in which an applied bias to the gate will be used for the wavelength tuning. In the Phase II program, we will optimize the design, growth, and process and passivation technologies and fabricate a dual color 64 x 64-FPA with detectivities as high as 1E11 cmH 1/2/W in the 12-16 and 16-20 mm spectral range.