Novel Broadband Materials and Components

Period of Performance: 07/29/2003 - 07/29/2004

$748K

Phase 2 SBIR

Recipient Firm

Epitaxial Technologies, LLC
1450 South Roling Road
Baltimore, MD 21227
Principal Investigator

Abstract

Epitaxial Technologies proposes to develop novel material technologies for the realization of broadband components such as oscillators, mixers and preamplifiers. We will achieve this by performing device designs to determine suitable material structures, epitaxial growth and device fabrication processes. We will build on the results of Phase I to design and grow the ideal material structures for RTBTs. Our approach will be to use the novel multi-function capability of the structure for monolithic integration of local oscillator (LO))/mixer/amplifier on a single SI-InP substrate The primary goal of this proposed Phase II effort is to demonstrate prototype broadband components with an "all-in-one" material structure by developing techniques for growing compound semiconductor heterostructures with high differential negative resistance and high power gain using molecular beam epitaxy (MBE). We will achieve this technological breakthrough by designing and fabricating a total monolithic integrated LO/mixer/amplifier chip with reduced footprints and at lower costs capable of operation at four frequencies ranging from 15 to 60 GHz.