Vertical SiC Static Induction Transistor for L-band

Period of Performance: 05/31/2002 - 05/30/2004

$750K

Phase 2 SBIR

Recipient Firm

Semisouth Laboratories
201 Research Blvd.
Starkville, MS 39759
Principal Investigator

Abstract

The Static Induction Transistor (SIT) is a vertical MESFET or JFET type device, which has the gates close together resulting in space charge limited current conduction. Unlike a bipolar junction transistor (BJT), the SIT is a majority carrier device, is voltage-controlled, and often gives higher breakdown voltage and input impedance. While most SIT development has occurred in Si, renewed interest in the use of SiC SIT's over the past 10 years has occurred because of SiC's superior material properties. By use of SiC, it is possible to increase the voltage (and thus power) rating of high-frequency amplifiers, and increase the power density by a factor of 4 to 10 in UHF to S-band transistors. In this SBIR phase II project, a new SiC SIT for L-band power applications will be created. Submicron dimensions needed to get useful gain in L- and S-band will be obtained by use a self-aligned process, which employs the same mask for the source finger definition, source contact, and formation of the gate. The proposed SiC SIT will incorporate a self-aligned process which will provide significant improvement in yield and device performance. L-band power applications will benefit from a SiC SIT because of the higher power density, higher operating voltage and higher projected operating temperature of SiC devices. Potential commercial applications include radar systems and cellular base stations.