Integrated Spin Dependent Hot Electron Transistor

Period of Performance: 05/05/1999 - 04/04/2001

$750K

Phase 2 SBIR

Recipient Firm

NVE Corp. (formerly Nonvolatile Electron
11409 Valley View Rd.
Eden Prairie, MN 55441
Principal Investigator

Abstract

Development of an integrated magnetorsistive-based 1 GHz switch for use in Magnetic Random Access Memory (MRAM) and magnetoresistive isolators is the objective of this proposed Phase II work. These switches are based on the technology developed in the Phase I work entitled "Integrated Spin Dependent Hot Electron Transistors." This work demonstrated the feasibility of fabricating two-junction (three-terninal) magnetoresistive devices and pointed this way towards a new and exciting technology. High speed switches based on this technology will be fabricated into extremely dense MRAM arrays. These devices will also be used for completely integrated high frequency magnetoresistive digital signal isolation components (IsoLoops) which will supplant bulky and expensive opto-isolators. Both the MRAM and IsoLoop technologies are especially relevant to space and missile applications where size, speed, and power are all critical factors. Work is required in three areas: 1) optimization of the basic spin transistor compontents, 2) magnetic design of the magnetoresistive elements and field generating straps to enable extremely high switching rates, and 3) design of silicon high speed interfacing integrated circuits. Successful completion of this proposed work will result in immediately usable 1Gbaud signal isolators, and demonstration of MRAM arrays with minimum feature size