Production of Semiconductor Grade Crystals from Recovered GaAs and InP Manufac

Period of Performance: 09/30/1998 - 09/30/2000

$750K

Phase 2 SBIR

Recipient Firm

American Xtal Technology
4311 Solar Way
Fremont, CA 94538
Principal Investigator

Abstract

Throughout the industrialized world there is a growing concern over the impact of industry on the environment, as well as concerns about losses of strategic materials. The III-V semiconductor manufacturing industry is no exception to theseconcerns. The production of gallium arsenide(GaAs), gallium phosphide (GaP) and indiumphosphide (InP) devices for military andcommercial uses (e.g., cellular phones and othercommunications equipment) results in a number ofwaste streams for which there are currently nobroadly acceptable recovery options. The III-Vcrystal growing foundries typically produceseveral waste streams of which only a few arepresently recycled. One such waste stream issolid dusts, cuttings and fragments from theprocessing of GaAS, GaP, or InP boules intowafers. This waste stream also includesout-of-spec wafers of GaAS, GaP, or InP, theslurry waste from slicing and polishing of wafers, and the large-volume aqueous of wastes frometching and polishing operations. These wastestreams are of concern because they may representa long term liability to the company. In Phase IAXT and UDRI have demonstrated the feasibility ofa low-cost purifacation process for III-Vcompounds which can be implemented in an on-siterefinery. In Phase II AXT proposes to demonstratecommercial feasibility of the process.