Novel Ferroelectric Thin Film IR Detector

Period of Performance: 10/06/1998 - 10/06/1999

$747K

Phase 2 SBIR

Recipient Firm

NZ Applied Technologies Corp.
14A Gill Street
Woburn, MA 01801
Principal Investigator

Abstract

NZ Applied Technologies (NZAT) proposes to develop a new uncooled IR detector array that potentially have ten times reduction in cost and three times increase in sensitivity over the current state-of-the-art IR detectors without crygenic cooling. The technology is based on fabricating ferroelectric thin films on silicon with integrated readout circuits and thus obviate bumb bonding. Unit detector cost, which will drop as both solder bumb bonding and cooling are eliminated, should drive penetration of, and expand the volume of, thermal camera and spectrometer markets. The new devices also have additional advantages in spectrum coverage, resolution, size, weight, and reliability. Phase I demonstrated growth of high-figure-of-pyroelectric-merit lead-scandium-tantalate on silicon at temperature below 500 degrees C. the Phase II program will tea, NZAT's ,material growth capability, Rockwell's detector expertise, and SensArray's market presence to make and test a prototype IR detector array. NZAT has obtained a loan to build a clean room facility to produce this type of device. One venture fund has committed to begin Phase III.